mbr10150 ct mbr10150 fct mbr10150 lct mbr10150 nct 1 of 7 major ratings and characteristics characteristics values units i f(total ) 1 0 a i fsm 15 0 a v r 15 0 v v f 0. 9 v t j 150 t storage - 6 5 ~150 case styles o rdering information part number package packaging mbr10150 ct to - 220 tube mbr10150 fct to - 220f tube mbr10150 lct to - 2 63 tube & r eel mbr10150 nct to - 262 tube i f(tot al) =1 0 a v r = 15 0 v v f = 0.9 v description/ features this low cost schottky rectifier has been optimized for low reverse leakage at high temperature. the proprietary barrier technology allows for reliable operation up to 150c junction temperature. typica l applications are in switching power supplies, converters, free - wheeling diodes, and reverse battery protection. 150 tj operation low power loss, high e fficiency low forward voltage drop high surge capacity lead free finish/rohs compliant(note 1) schottky rectifier to - 220 to - 220f to - 263 to - 262 1 anode 2 cathode 3 anode
mbr10150 ct mbr10150 fct mbr10150 lct mbr10150 nct 2 of 7 rev. 1.0 electrical characteristics ( t a m b = 2 5 ) characteristic symbol mbr10150 unit peak repetitive reverse voltage v rrm working peak reverse voltage v rwm d c blocking voltage v r 1 5 0 v i f(per leg) 5 average rectifi e r output current i f(totel) 1 0 a non - repetitive peak surge current (surge applied at rated load conditions halfwave, single phase,60hz) i fsm 15 0 a maximum instan tan eous forward voltage @i f = 5 a,tc=25 @i f = 5 a , t c = 1 2 5 v f 0. 9 0. 8 v p e a k r e v e r s e c u r r e n t @ t c = 2 5 a t r a t e d d c b l o c k i n g v o l t a g e @ t c = 1 2 5 i r 0. 1 6 ma maximum operating junction temperature t j - 65~150 storage temperature t stg - 65~150 to - 220 2.5 to - 220f 4.5 jc to - 262/263 2.5 to - 220 60 to - 220f 60 maximum thermal resistance ja to - 262/263 60 /w notes:1.high temperature solder exemption applied, see eu directive annex 7.
mbr10150 ct mbr10150 fct mbr10150 lct mbr10150 nct www.globalsemi - group.com 3 of 7 characteris t ic s c urve figure 1. forward current derating curve figure 2. typical reverse current per diode figure 3.typical forward voltage per diode
mbr10150 ct mbr10150 fct mbr10150 lct mbr10150 nct 4 of 7 rev. 1.0 to - 220 f m echanical data unit.: mm symb ol min. nom. max. symbol min. nom. max. a 4.2 - 4.70 e1 - 7.0 - a1 2.30 - 2.90 e - 2.54 - b 0.45 - 0.9 l 12.5 - 14.3 b 1 1.1 - 1.7 l1 9.45 - 10.05 c 0.35 - 0.9 l2 15 - 16 d 14.5 - 17 l3 3.2 - 4.4 d1 6.10 - 9.0 p 3.0 - 3.3 e 9.6 - 10.3 q 2.5 - 2.90
mbr10150 ct mbr10150 fct mbr10150 lct mbr10150 nct www.globalsemi - group.com 5 of 7 to - 220 m echanical data unit.: mm symbol min. nom. max. symbol min. nom. max. a 4.0 - 4.80 e 9.90 - 10.70 b 1.20 - 1.40 e - 2.54 - b1 1.0 - 1.30 f 1.10 - 1.40 b 1 0.65 - 1.00 l 12.50 - 14.50 c 0.40 - 0.55 l1 3.00 3.50 4 .00 d 15.0 - 16.5 q 2.50 - 3.00 d1 5.90 - 6.90 q1 2.00 - 2.90 p - 3.80 -
mbr10150 ct mbr10150 fct mbr10150 lct mbr10150 nct 6 of 7 rev. 1.0 to - 2 62 m echanical data unit.: mm symbol min. nom. max. symbol min. nom. max. a 3.80 - 4.80 e - 2.54 - a1 2.00 - 2.80 e1 - - 5.30 b 0.60 - 1.0 0 e 9.90 - 10.70 b 1 1.20 - 1.40 l 12.50 - 14.50 c 0.40 - 0.70 l1 3.00 3.50 4.00 c2 1.10 - 1.40 l2 - - 1.50 d - 9.60 - - - -
mbr10150 ct mbr10150 fct mbr10150 lct mbr10150 nct www.globalsemi - group.com 7 of 7 to - 2 63 m echanical data unit.: mm symbol min. nom. max. symbol min. nom. max. a 4.42 - 4.72 e 8.99 - 9.29 b 1.22 - 1.32 e1 2.44 - 2.64 b 0.76 - 0.86 e2 4.98 - 5.18 b 1 1.22 - 1.32 l1 15.19 - 15.79 b2 0.33 - 0.43 l2 1.94 - 2.19 c 1.22 - 1.32 l3 - - - d 9.95 - 10.25 - - - - data and specifications subject to change with out notice. this product has been designed and qualified for industrial level and lead - free. qualificat ion standards can be found on gs 's web site. global semiconductor headquarters: scotia centre 4th floor p.o.box 2804 george town grand cayman ky1 - 1112 cayman visit us at www. globalsemi - group .com for s ales contact information.
|
